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The 25 wafer chamber was developed to optimize the benefits of reduced pressure, gas phase etching with the throughput demands of production. It is able to process up to 25 wafers at a time with excellent within wafer, wafer to wafer, and batch to batch uniformities. The internal cassette supports each wafer on three ceramic pins, and can be easily adjusted to accommodate 100, 125, 150 or 200 mm wafers.
Several unique design features were employed to address the uniformity challenges when processing multiple wafers simultaneously. The system incorporates a proven, optimized cross-flow design that is highly desirable for operation of a multiple wafer reactor to overcome temperature variations and boundary layer effects. By separating the wafer loading and processing zones, temperature non-uniformity and fluid dynamic disturbances normally caused by the wafer load/unload port have been eliminated.
In order to create an ideal, uniform thermal environment, densified carbon liners were chosen for all internal reactor surfaces. This material exhibits good conductivity and emissivity, and has thermal characteristics similar to silicon. Special cross-flow manifolds, optimized using extensive fluid dynamic modeling, are used for both the gas inlet and exhaust. External reactor surfaces are heated with a number of independent temperature-controlled zones for process and performance optimization.
With its built in loading elevator, the MEMS-CET 25 wafer process module is designed for installation on a multi-module cluster system for fully automatic wafer handling.
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