Products and Technology - LSMCD Technology Overview

Liquid Source Misted Chemical Deposition (LSMCD)

LSMCD reduces the liquid chemical to an aerosol of submicron size droplets with precisely controlled diameters. Electrostatic and fluid forces in the LSMCD reactor transport the droplets to the wafer surface at essentially ambient temperature and pressure. These conditions preserve precursor stoichiometry and distinguish LSMCD from CVD methodologies.

Primaxx cured films exhibit the optimal electrical and/or optical properties required for the successful use of ferroelectric, low-k, high-k and optical thin films in today's emerging devices.

LSMCD Principles of Operation

Chemical is drawn from a liquid source and directed to a mono-disperse aerosol generator (atomizer) where the liquid chemical is converted into submicron droplets with average particle diameters less than 0.25 µm. Once the aerosol is created, it is carried to the reactor chamber by an inert carrier gas, such as nitrogen. The small size of the liquid droplets promotes a highly uniform coating of the wafer submicron architecture, while preventing the chemical from coating the process tubing and reactor components.

Inside the reactor the aerosol mist passes through a showerhead, then through a metal field screen, and into an electric field created between the substrate, which has a high voltage applied to it, and the grounded field screen. Electrostatic forces attract the droplets to the wafer surface and into the wafer boundary layer, where diffusive forces are sufficient to form a uniform coating. The wafer rotates slowly, at about 10 RPM, to promote uniform deposition while minimizing centrifugal action on the liquid film.

Excess aerosol is directed away from the bottom of the wafer and swept into the exhaust stream by a nitrogen under-purge and the unique design of the reactor chamber.

Liquid Source Misted Chemical Deposition Module

The LSMCD Process Module deposits a uniform film of liquid sourced chemical onto the wafer surface.

  • Reduces chemical usage by up to 50% (compared with spin-on technology)
  • Can increase process yields by more than 50% (when compared with spin-on technology)
  • Highly uniform, conformal film depositions
  • Produces excellent results with MOD precursors
  • The Auto Clean function quickly cleans the reactor periodically with no disassembly required
  • In situ Edge Removal cleans deposited film from the wafer's edge