Products and Technology - LSMCD Performance and Applications

LSMCD technology is able to produce high quality thin films that not only exhibit excellent electrical properties, but also give good conformal coverage over surface features. The data summarized below show hysteresis and leakage current characteristics for 90 nm Strontium Bismuth Tantalate (SBT) films.

Because LSMCD yields excellent film conformality as well as eliminating voids around surface structures typically associated conventional spin-on technology, process yields can increase dramatically as illustrated. Data are for a 100 nm SBT film annealed at 700 oC.

Applications

Applications for LSMCD thin film technology include ferroelectric materials for memory and MEMS devices, magnetoelectric materials for memory devices, high k and low k dielectric materials, and opto-electronic materials for LCD and projection products.

LSMCD has been used to successfully deposit SBT, Barium Strontium Titanate (BST), Lead Zirconate Titanate (PZT), Strontium Tanatalate (STO), Indium Tin Oxide (ITO) and other MOD materials onto a variety of substrates. Photoresists have been successfully applied to both wafers and glass plates using this technology.

LSMCD can be used to deposit thin metal oxide films of any of the elements (or combinations) highlighted below.