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Primaxx's patented HF Vapor oxide etch technology utilizes a reduced pressure, gas phase, controlled anhydrous HF/Alcohol process. This delivers selective, residue free MEMS "etch release" capability for sacrificial silicon oxides mitigating "runaway" conditions. Technology features and benefits include:
- Reduced pressure, gas phase etch process for sacrificial silicon oxides based on proven, patented technology
- Process eliminates "stiction" problems that are typically associated with wet etch technologies
- Uses anhydrous HF/Alcohol vapor to provide controlled, residue-free etching without attacking exposed aluminum features
- Alcohol is hygroscopic giving a stable, repeatable process when compared to HF/water vapor technology
- Pump down allows surface moisture desorption resulting in identical process start conditions every run
- No complex, involved waste management issues (as with Wet Bench technology)
- CoO is substantially less than that of traditional Wet Bench systems
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