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Primaxx MEMS-CET technology utilizes a reduced pressure, gas phase, controlled anhydrous HF/Alcohol etch process. This delivers selective, residue free MEMS "etch release" capability for sacrificial silicon oxides mitigating "runaway" conditions. Technology features and benefits include:
- Reduced pressure, gas phase etch process for sacrificial SiO2 based on proven, patented 1990s technology for silicon wafer cleaning
- Uses anhydrous HF + Alcohol vapor to provide controlled, residue-free etching without attacking aluminum features
- Chosen alcohols are hygroscopic with higher vapor pressure giving a stable (no runaway conditions) and repeatable process compared to HF/water vapor
- Pump down allows surface moisture desorption resulting in identical process start conditions every run
- Gas phase process provides maximum feature penetration, and eliminates contamination and "stiction" problems that are typically associated with Wet Bench/Supercritical Dry technologies
- No complex, involved waste management issues (as with Wet Bench technology)
- Reduction in process consumables and facilities requirements reduces cost of ownership: cost of ownership is substantially less than that of traditional Wet Bench systems
- Increased process yields for most devices, especially 3-D structures
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